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 4V Drive Nch MOSFET
RSH065N06
Structure Silicon N-channel MOSFET Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8). Application Switching
Each lead has same dimensions
Dimensions (Unit : mm)
SOP8
Packaging specifications
Package Type RSH065N06 Code Basic ordering unit (pieces) Taping TB 2500
Inner circuit
(8) (7) (6) (5) (8) (7) (6) (5)
2 1
(1) (2) (3) (4)
(1)Source (2)Source (3)Source (4)Gate (5)Drain (6)Drain (7)Drain (8)Drain
Absolute maximum ratings (Ta=25C)
Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Symbol Limits VDSS 60 VGSS 20 6.5 ID IDP 1 26 IS 1.6 26 ISP 1 PD 2 2.0 Tch 150 Tstg -55 to +150 Unit V V A A A A W C C
(1) (2) (3) (4)
1 ESD PROTECTION DIODE 2 BODY DIODE
A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use the protection circuit when the fixed voltages are exceeded.
Total power dissipatino Channel temperature Range of storage temperature
1 Pw10s, Duty cycle1% 2 Mounted on a ceramic board.
Thermal resistance
Parameter Channel to ambient
Mounted on a ceramic board.
Symbol Rth (ch-A)
Limits 62.5
Unit C / W
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c 2009 ROHM Co., Ltd. All rights reserved.
1/4
2009.12 - Rev.A
RSH065N06
Electrical characteristics (Ta=25C)
Parameter Symbol Min. - 60 - 1.0 - - - 4 - - - - - - - - - - Typ. - - - - 24 28 31 - 900 200 100 13 25 60 20 11 2 4 Max. 10 - 1 2.5 37 44 48 - - - - - - - - 16 - - Gate-source leakage IGSS Drain-source breakdown voltage V(BR) DSS Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge
Pulsed
Data Sheet
Unit A V A V m S pF pF pF ns ns ns ns nC nC nC
Conditions VGS=20V, VDS=0V ID=1mA, VGS=0V VDS=60V, VGS=0V VDS=10V, ID=1mA ID=6.5A, VGS=10V ID=6.5A, VGS=4.5V ID=6.5A, VGS=4.0V ID=6.5A, VDS=10V VDS=10V VGS=0V f=1MHz ID=3.3A, VDD 30V VGS=10V RL=9.1 RG=10 ID=6.5A, VDD 30V VGS=5V RL=4.6, RG=10
RDS (on)
Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd

Body diode characteristics (Source-Drain) (Ta=25C)
Parameter Forward voltage
Pulsed
Symbol VSD
Min. -
Typ. -
Max. 1.2
Unit V
Conditions IS=1.6A, VGS=0V
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c 2009 ROHM Co., Ltd. All rights reserved.
2/4
2009.12 - Rev.A
RSH065N06
Electrical characteristic curves
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m)
VDS=10V Pulsed
Data Sheet
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m)
10
Ta=125C Ta=75C Ta=25C Ta= -25C
1000
Ta=125C Ta=75C Ta=25C Ta= -25C
1000
Ta=125C Ta=75C Ta=25C Ta= -25C
VGS=10V Pulsed
VGS=4.5V Pulsed
DRAIN CURRENT : ID (A)
1
100
100
0.1
10
10
0.01
0.001 0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
1 0.01
0.1
1
10
1 0.01
0.1
1
10
GATE-SOURCE VOLTAGE : VGS (V)
DRAIN CURRENT : ID (A)
DRAIN CURRENT : ID (A)
Fig.1 Typical Transfer Characteristics
Fig.2 Static Drain-Source On-State Resistance vs. Drain Current()
Fig.3 Static Drain-Source On-State Resistance vs. Drain Current()
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m)
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m)
1000 VGS=4V Pulsed
Ta=125C Ta=75C Ta=25C Ta= -25C
100
ID=6.5A ID=3.25A
Ta=25C Pulsed
10000
Ta=25C f=1MHz VGS=0V
CAPACITANCE : C (pF)
100
1000
Ciss
50
Coss
100
10
Crss
10 0.01
1 0.01
0.1
1
10
0
0
5
10
15
0.1
1
10
100
DRAIN CURRENT : ID (A)
GATE-SOURCE VOLTAGE : VGS (V)
DRAIN-SOURCE VOLTAGE : VDS (V)
Fig.4 Static Drain-Source On-State Resistance vs. Drain Current()
Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage
Fig.6 Typical Capacitance vs. Drain-Source Voltage
10
10000
GATE-SOURCE VOLTAGE : VGS (V)
SWITCHING TIME : t (ns)
SOURCE CURRENT : IS (A)
1000
tf td(off)
Ta=25C VDD=30V VGS=10V RG=10 Pulsed
10 Ta=25C VDD=30V ID=6.5A RG=10 Pulsed
VGS=0V Pulsed
1
Ta=125C Ta=75C Ta=25C Ta= -25C
100
5
0.1
tr
10
td(on)
1 0.01
0.1
1
10
0
0.01 0.0
0 5 10 15 20
0.5
1.0
1.5
SOURCE-DRAIN VOLTAGE : VSD (V)
DRAIN CURRENT : ID (A)
TOTAL GATE CHARGE : Qg (nC)
Fig.7 Switching Characteristics
Fig.8 Dynamic Input Characteristics
Fig.9 Source Current vs. Source-Drain Voltage
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c 2009 ROHM Co., Ltd. All rights reserved.
3/4
2009.12 - Rev.A
RSH065N06
Measurement circuit
Pulse Width
Data Sheet
VGS
ID RL D.U.T.
VDS
VGS VDS 50% 10% 10%
90%
50% 10%
RG VDD
td(on) ton 90% tr td(off) toff 90% tr
Fig.10 Switching Time Test Circuit
Fig.11 Switching Time Waveforms
VG
VGS ID RL IG (Const.) D.U.T. RG VDD VDS
Qg VGS Qgs Qgd
Charge
Fig.12 Gate Charge Test Circuit
Fig.13 Gate Charge Waveform
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c 2009 ROHM Co., Ltd. All rights reserved.
4/4
2009.12 - Rev.A
Notice
Notes
No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. The Products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices). The Products specified in this document are not designed to be radiation tolerant. While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or malfunction for a variety of reasons. Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your use of any Product outside of the prescribed scope or not in accordance with the instruction manual. The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel-controller or other safety device). ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes. If a Product is intended to be used for any such special purpose, please contact a ROHM sales representative before purchasing. If you intend to export or ship overseas any Product or technology specified herein that may be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to obtain a license or permit under the Law.
Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us.
ROHM Customer Support System
http://www.rohm.com/contact/
www.rohm.com (c) 2009 ROHM Co., Ltd. All rights reserved.
R0039A


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